Why GaN?
– Top candidate to replace or complement conventional semiconductors
– High applicability in consumer electronics
– Poised to become the 2nd most used semiconductor globally
Porous GaN: A different kind of GaN
– Innovative
– Breakthrough platform technology
– Synergies with standard semiconductor processes
- Epitaxy ready
- Substrate compatibility (Al2O3, Si, SiC, GaN etc.)
- High quality crystals
- Independent of substrate size (50mm – 300mm)
- Nano scale precision
- Engineered optical, electrical, mechanical and thermal properties
- Mature Technology for scaling-up & mass production
- Reduced complexity