CS International Conference

“Enhancing microLED performance with microstructures”

Porotech CEO & co-founder, Dr Tongtong Zhu, will be presenting at this year’s CS International Conference in Brussels on 28-29th June, 2022.

Abstract

Porous semiconducting nitrides are effectively a new class of semiconducting material for use in devices such as light-emitting diodes. Porosity provides new opportunities to engineer properties including refractive index, and thermal and electrical conductivity. Sub-surface porous gallium nitride (GaN) is conventionally created by forming deep trenches using a dry-etching process. Porotech has developed a novel alternative etching process that can be mass-produced for commercial applications. This enables the creation of a variety of sub-surface porous architectures on top of which a range of devices may be grown, from light-emitting diodes to single photon sources – and now native red InGaN microLEDs.

 

For more information & registration, visit here: https://csinternational.net/